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Precise cutting under stereo microscope

  • Precise
  • Small
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Thermoplastic gluing under stereo microscope

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Micropol

 

Micropol polisher

Polisher for TEM & Metallography Model MC 2

  • Rugged, corrosion proof construction
  • Variable speed control for precision polishing
  • Quick change bayonet mount bowls
  • Timer for automatic operation
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Micropol micropolisher

 

SEM ion mill model SC-2000
For high-quality site-specific sample preparation in SEM application

The SC-2000 model is equipped both with high- and low-energy ion sources. Rapid slope cutting with the high-energy ion gun followed by gentle surface cleaning with the low-energy ion gun provides cross-sectional SEM samples suitable for semiconductor failure analysis and other analytical purposes. The system also provides an ion milling based solution for improving and cleaning of mechanically polished SEM samples and preparation of damage-free surfaces for EBSD technique.

 

 

Features

  • Cross-sectional sample preparation by slope cutting in 90, 45 and 30 by different sample holders
  • Final polishing and cleaning of traditional SEM and EBSD samples
  • Load-lock system for faster and easier sample exchange
  • High-energy ion gun for rapid milling
  • Optional ultra high-energy ion gun specially recommended for ion milling extra hard materials or for extreme fast milling
  • Low-energy ion gun for gentle surface polishing and cleaning
  • Automated parameter settings and operation
  • Sample rotation and oscillation
  • Real-time monitoring of the milling process by high-resolution CMOS camera and TFT monitor

 

Specifications
Ion sources: two ion guns: focused high-energy ion gun operating from 2keV to 10keV or
    optionally ultra high-energy ion gun operating up to 20 keV
    focused low-energy ion gun in the range of 100eV to 2keV
    continuously and independently adjustable milling energy
  beam current density: max. 100mA/cm² for focused high-energy ion gun
    max. 150mA/cm² for ultra high-energy ion gun
    max. 10mA/cm² for focused low-energy ion gun
  sputtering rate: 150 μm/hour on Si at 30º for focused high-energy ion gun
    530 μm/hour on Si at 30º for ultra high-energy ion gun
    28 μm/hour on Si at 30º for focused low-energy ion gun
     
Sample stage: sample size: slope cutting sample holder (available with 30°, 45°, 60°, 90° tilted platforms)
           for 30°, 45°, 60° holders: max. 20 mm (l) x 16 mm (w) x 7 mm (th)
           for 90° holder: max. 20 mm (l) x 16 mm (w) x 5.5 mm (th)
    sample holder for surface cleaning (EBSD) using 3 different head type:
           flat head type: max. Ø36 mm x 0-5.5 mm
           standard type: max. Ø26 mm x 3-14 mm
           hollow type: max. Ø24 mm x 13-23 mm
  sample tilting: 0º to 30º in 0.1º increments
  sample rotation: in-plane rotation, 360º (available only for surface cleaning sample holder)
  sample oscillation: in-plane oscillation from +10 to +40º in 10 steps
     
Sample cooling: LN2 cooling for preparing heat sensitive samples - optional
   
Vacuum system: oil-free diaphragm and turbomolecular pumps with combined (Pirani/Penning) vacuum gauge
     
Gas supply system: 99.999% purity argon  
  high-precision working gas flow control with motorized needle valve
     
Imaging system: high resolution CMOS camera with manual zoom video lens of 50-400x magnification
     
Computer control: easy-to-use graphical interface, automated ion source setup, milling parameter setting and operation control